Modeling of Quantum Dots with the Finite Element Method

Considering the increasing number of experimental results in manufacturing process quantum dots (QDs) with different geometries, and fact that most numerical methods can be used to investigate nontrivial geometries require large computational capacities, finite element method (FEM) becomes an incredibly attractive tool for modeling semiconductor QDs. In current article, we FEM obtain first twenty-six probability densities energy values following GaAs structures: rectangular, spherical, cylindrical, ellipsoidal, spheroidal, conical QDs, as well rings, nanotadpoles, nanostars. The calculations were compared exact analytical solutions a good deviation was obtained. ground-state dependence on size obtained find optimal parameter investigated structures. abovementioned calculation valuable insight into effects quantization’s shape Additionally, wavefunctions energies spherical CdSe/CdS while taking account diffusion potential depth use piecewise Woods–Saxon potential. effective mass dielectric permittivity normal A structure quasi-type-II band alignment at core ?2.2 nm This result is consistent data.